Threshold and Gain Characteristics of Brillouin Back-Scattered Stokes Mode in Magnetized Iii-V Semiconductors

Abstract

In this paper, a theoretical formulation is developed to study threshold and gain characteristics of Brillouin back-scattered Stokes mode (BBSM) in transversely magnetized doped III-V semiconductors. Expressions are obtained for threshold pump electric field E0,th and gain coefficients of BBSM (via effective Brillouin susceptibility (?B)eff) under different situations of practical interest, i.e. (i) electrostrictive coupling only (g?), (ii) piezoelectric coupling only (g?), and (iii) electrostrictive and piezoelectric coupling both (g??). Resonance conditions cause a sharp fall in threshold field and rise in gain coefficients of BBSM such that g? < g? < g??. The analysis establishes the importance of III-V semiconductors for obtaining large BBSM gain coefficients by controlling the material parameters and/or externally applied magnetic field. The dependence of BBSM gain coefficients on the magnetostatic field strength around resonance could be used in the fabrication of ultra-fast optical switching devices.