Investigation of AlGaN/GaN High Electron Mobility Transistors performance for various Al content and barrier layer thicknesses

  • MOHD. Wasim et al.


We report the performance of AlGaN/GaN based HEMT for various Al mole fractions and various thickness (16 nm , 20 nm and 24 nm) of barrier layer using Synopsys TCAD. It is observed that Al content in the AlGaN playing major role for device performance. The peak transconductance of 0.22 S/mm is observed for 16 nm thickness 25% of Al content in the barrier layer and  drain current density (IDS) of 1.4 A/mm is recorded at 24 nm barrier thickness.